Narrow Gap Semiconductors

Discover the cutting-edge research in "Narrow Gap Semiconductors," edited by Jean Leotin and published by Taylor & Francis Ltd in 2006. This comprehensive volume, spanning 650 pages, presents a wealth of knowledge from the 12th International Conference on Narrow-Gap Semiconductors and Related Materials, held in Toulouse, France. Dive into various aspects of narrow gap semiconductor (NGS) research, covering materials, growth, characterization, and the fundamental physical phenomena that underpin these innovative technologies.

The book delves into novel materials such as InAs and its related alloys, alongside traditional NGS materials like InSb, PbTe, and HgCdTe. Each section is meticulously crafted to provide researchers and enthusiasts with valuable insights into devices and applications of NGS. Whether you are a student, scientist, or industry professional, this essential resource will enhance your understanding of the fascinating world of narrow gap semiconductors.