Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

Delve into the cutting-edge research of Jie Cheng with "Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect." Published by Springer Verlag in 2019, this insightful paperback spans 137 pages, exploring intricate challenges in the chemical mechanical polishing (CMP) process used in integrated circuits.

Cheng's thesis presents a comprehensive examination of ruthenium (Ru) as an innovative barrier layer material. This work tackles previously unresolved issues in CMP, making it essential reading for professionals and researchers in the semiconductor industry. By focusing on the mechanisms at play, this groundbreaking study not only advances academic knowledge but also provides practical implications for enhancing interconnect reliability in modern electronics.

Whether you are an industry expert or a student eager to learn about CMP advancements, this book is an invaluable resource that bridges theoretical concepts with real-world applications.