Research on the Radiation Effects and Compact Model of SiGe HBT

Discover the intricate world of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with "Research on the Radiation Effects and Compact Model of SiGe HBT" by Yabin Sun. Published by Springer Verlag in 2019, this insightful book offers a detailed exploration of radiation effects and the development of a compact model for SiGe HBTs. Spanning 168 pages, it serves as an essential resource for researchers and engineers alike, looking to deepen their understanding of the topic. This paperback edition is a reprint of the original 1st edition from 2018, ensuring that you receive the latest insights and advancements in this rapidly evolving field. Ideal for those engaged in semiconductor research, this book combines theoretical foundations with practical applications, making it a valuable addition to your academic library.