Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Discover the intricacies of nanoscale semiconductor devices with Stress and Strain Engineering at Nanoscale in Semiconductor Devices by C. K. Maiti. Published by Taylor & Francis Ltd in 2021, this comprehensive hardback spans 260 pages and delves into the performance assessment of advanced nanoscale devices utilizing strained SiGe and various stressors.

The book is grounded in detailed 3D process and device simulations, incorporating mechanical stress simulations through finite element techniques. It offers valuable insights into process-induced stress transfer and the latest developments in strain-engineered devices, particularly at the cutting-edge 7nm technology node and below.

Whether you are an engineering student, a researcher, or a professional in the field, this essential resource will enhance your understanding of the critical role stress and strain play in semiconductor technology.